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ZXMS6005DT8 데이터시트(PDF) 1 Page - Diodes Incorporated |
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ZXMS6005DT8 데이터시트(HTML) 1 Page - Diodes Incorporated |
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1 / 9 page ![]() ZXMS6005DT8 Document Number DS32248 Rev. 1 - 2 1 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ™ MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Ω Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over- current, over-voltage (active clamp) and ESD protected logic level functionality independently per channel. The ZXMS6005DT8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. FEATURES • Compact dual package • Low input current • Logic Level Input (3.3V and 5V) • Short circuit protection with auto restart • Over voltage protection (active clamp) • Thermal shutdown with auto restart • Over-current protection • Input Protection (ESD) • High continuous current rating ORDERING INFORMATION DEVICE PART MARK REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMS6005DT8TA ZXMS 6005D 7 12 embossed 1,000 units SM8 Package |
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