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ZXMS6005DT8 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 ZXMS6005DT8
상세설명  60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET??MOSFET
PDF  9 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMS6005DT8 데이터시트(HTML) 4 Page - Diodes Incorporated

  ZXMS6005DT8 Datasheet HTML 1Page - Diodes Incorporated ZXMS6005DT8 Datasheet HTML 2Page - Diodes Incorporated ZXMS6005DT8 Datasheet HTML 3Page - Diodes Incorporated ZXMS6005DT8 Datasheet HTML 4Page - Diodes Incorporated ZXMS6005DT8 Datasheet HTML 5Page - Diodes Incorporated ZXMS6005DT8 Datasheet HTML 6Page - Diodes Incorporated ZXMS6005DT8 Datasheet HTML 7Page - Diodes Incorporated ZXMS6005DT8 Datasheet HTML 8Page - Diodes Incorporated ZXMS6005DT8 Datasheet HTML 9Page - Diodes Incorporated  
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ZXMS6005DT8
Document Number DS32248 Rev. 1 - 2
4 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
RECOMMENDED OPERATING CONDITIONS
The ZXMS6005DT8 is optimised for use with µC operating from 3.3V and 5V supplies.
Symbol
Description
Min
Max
Units
VIN
Input voltage range
0
5.5
V
TA
Ambient temperature range
-40
125
°C
VIH
High level input voltage for MOSFET to be on
3
5.5
V
VIL
Low level input voltage for MOSFET to be off
0
0.7
V
VP
Peripheral supply voltage (voltage to which load is referred)
0
24
V
CHARACTERISTICS
110
10m
100m
1
10
Limited by Over-Current Protection
Single Pulse
T
amb
=25°C
See Note (a)(d)
Limited
by R
DS(on)
1ms
10ms
100ms
1s
DC
Safe Operating Area
V
DS
Drain-Source Voltage (V)
Limit of s/c protection
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1 active die
Derating Curve
Temperature (°C)
2 active die
100µ
1m
10m 100m
1
10
100
1k
0
20
40
60
80
100
120
T
amb
=25°C
See Note (a)(d)
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Pulse Width (s)
100µ
1m
10m 100m
1
10
100
1k
1
10
100
Single Pulse
T
amb
=25°C
See Note (a)(d)
Pulse Power Dissipation
Pulse Width (s)



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