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PC912XDP512F0MPVR 데이터시트(PDF) 1259 Page - Freescale Semiconductor, Inc

부품명 PC912XDP512F0MPVR
상세설명  HCS12X Microcontrollers
PDF  1348 Pages
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제조업체  FREESCALE [Freescale Semiconductor, Inc]
홈페이지  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

PC912XDP512F0MPVR 데이터시트(HTML) 1259 Page - Freescale Semiconductor, Inc

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Appendix A Electrical Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.21
Freescale Semiconductor
1261
Table A-17. NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num
C
Rating
Symbol
Min
Typ
Max
Unit
1
D External oscillator clock
fNVMOSC
0.5
—
801
1 Restrictions for oscillator in crystal mode apply.
MHz
2
D Bus frequency for programming or erase operations
fNVMBUS
1
—
—
MHz
3
D Operating frequency
fNVMOP
150
—
200
kHz
4
P Single word programming time
tswpgm
462
2 Minimum programming times are achieved under maximum NVM operating frequency f
NVMOP and maximum bus frequency
fbus.
—
74.53
3 Maximum erase and programming times are achieved under particular combinations of f
NVMOP and bus frequency fbus. Refer
to formulae in Sections Section A.3.1.1, “Single Word Programming” – Section A.3.1.4, “Mass Erase” for guidance.
µs
5
D Flash burst programming consecutive word 4
4 Burst programming operations are not applicable to EEPROM
tbwpgm
20.42
—313
µs
6
D Flash burst programming time for 64 words4
tbrpgm
1331.22
—
2027.53
µs
7
P Sector erase time
tera
205
5 Minimum erase times are achieved under maximum NVM operating frequency, f
NVMOP.
—
26.73
ms
8
P Mass erase time
tmass
1005
—
1333
ms
9
D Blank check time Flash per block
tcheck
116
6 Minimum time, if first word in the array is not blank
—
655467
7 Maximum time to complete check on an erased block
tcyc
10
D Blank check time EEPROM per block
tcheck
116
—
20587
tcyc



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