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PC912XDP512F0MPVR 데이터시트(PDF) 1260 Page - Freescale Semiconductor, Inc

부품명 PC912XDP512F0MPVR
상세설명  HCS12X Microcontrollers
PDF  1348 Pages
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제조업체  FREESCALE [Freescale Semiconductor, Inc]
홈페이지  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

PC912XDP512F0MPVR 데이터시트(HTML) 1260 Page - Freescale Semiconductor, Inc

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Appendix A Electrical Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.21
1262
Freescale Semiconductor
A.3.2
NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures. The program/erase cycle count on the sector is
incremented every time a sector or mass erase event is executed
Table A-18. NVM Reliability Characteristics1
1 T
Javg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
Conditions are shown in Table A-4 unless otherwise noted
Num
C
Rating
Symbol
Min
Typ
Max
Unit
Flash Reliability Characteristics
1
C Data retention after 10,000 program/erase cycles at an
average junction temperature of TJavg
≤ 85°C
tFLRET
15
1002
2 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25
°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please refer
to Engineering Bulletin EB618.
—
Years
2
C Data retention with <100 program/erase cycles at an
average junction temperature TJavg
≤ 85°C
20
1002
—
3
C Number of program/erase cycles
(–40
°C
≤ T
J
≤ 0°C)
nFL
10,000
—
—
Cycles
4
C Number of program/erase cycles
(0
°C
≤ T
J
≤ 140°C)
10,000
100,0003
3 Spec table quotes typical endurance evaluated at 25°C for this product family, typical endurance at various temperature can
be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please refer to
Engineering Bulletin EB619.
—
EEPROM Reliability Characteristics
5
C Data retention after up to 100,000 program/erase cycles
at an average junction temperature of TJavg
≤ 85°C
tEEPRET
15
1002
—
Years
6
C Data retention with <100 program/erase cycles at an
average junction temperature TJavg
≤ 85°C
20
1002
—
7
C Number of program/erase cycles
(–40
°C
≤ T
J
≤ 0°C)
nEEP
10,000
—
—
Cycles
8
C Number of program/erase cycles
(0
°C < TJ
≤ 140°C)
100,000
300,0003
—



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