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TPD2EUSB30 데이터시트(PDF) 3 Page - Texas Instruments

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부품명 TPD2EUSB30
상세설명  2, 4-CHANNEL ESD SOLUTION FOR SUPER-SPEED (6 GBPS) USB 3.0 INTERFACE
PDF  15 Pages
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제조업체  TI [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI - Texas Instruments

TPD2EUSB30 데이터시트(HTML) 3 Page - Texas Instruments

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TPD2EUSB30, TPD4EUSB30
www.ti.com
SLVSAC2 – AUGUST 2010
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
IO voltage tolerance
D+, D– pins
0
6
TA
Operating free-air temperature range
–40
85
°C
Tstg
Storage temperature range
–65
125
°C
IEC 61000-4-2 Contact Discharge
D+, D– pins
±8
kV
IEC 61000-4-2 Air-Gap Discharge
D+, D– pins
±8
kV
ESD protection
(TPD2EUSB30)
IEC 61000-4-2 Air-Gap Discharge
D+, D– pins
±9
kV
(TPD4EUSB30)
Peak pulse current (tp = 8/20 ms)
D+, D– pins
5
A
Peak pulse power (tp = 8/20 ms)
D+, D– pins
45
W
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VRWM
Reverse stand-off voltage
D+,D– pins to ground
5.5
V
Vclamp
Clamp voltage
D+,D– pins to ground,
IIO = 1 A
8
V
IIO
Current from IO port to supply pins
VIO = 2.5 V,
ID = 8 mA
0.01
0.1
mA
D+,D– pins,
VIO = 2.5 V,
VD
Diode forward voltage
0.6
0.8
0.95
V
lower clamp diode,
ID = 8 mA
Rdyn
Dynamic resistance
D+,D– pins
I = 1 A
1
CIO-IO
Capacitance IO to IO
D+,D– pins
VIO = 2.5 V
0.05
pF
D+,D– pins (DRT)
0.7
CIO-GND Capacitance IO to GND
VIO = 2.5 V
pF
D1+, D1-,
0.8
D2+, D2- (DQA )
VBR
Break-down voltage
IIO = 1 mA
7
V
Copyright © 2010, Texas Instruments Incorporated
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Product Folder Link(s): TPD2EUSB30, TPD4EUSB30



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