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TDF8591TH 데이터시트(PDF) 17 Page - NXP Semiconductors

부품명 TDF8591TH
상세설명  2 X 100 W SE (4 OHM) or 1 X 310 W BTL (4 OHM) class-D amplifier
PDF  34 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
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TDF8591TH 데이터시트(HTML) 17 Page - NXP Semiconductors

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TDF8591TH_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 5 March 2008
17 of 34
NXP Semiconductors
TDF8591TH
2
× 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier
12.5 Heat sink requirements
In some applications it may be necessary to connect an external heat sink to the
TDF8591TH. The thermal foldback activates on Tj = 140 °C. The expression below shows
the relationship between the maximum power dissipation before activation of the thermal
foldback and the total thermal resistance from junction to ambient:
Ω
The power dissipation (P) is determined by the efficiency (
η) of the TDF8591TH. The
efficiency measured as a function of output power is given in Figure 30 and 31. The power
dissipation can be derived as function of output power (see Figure 32 and 33).
Example of a heatsink calculation for the 4
Ω BTL application with ±18 V supply:
• An audio signal with a crest factor of 10 (the ratio between peak power and average
power is 10 dB), this means that the average output power is 1
⁄
10 of the peak power
• The peak RMS output power level is 110 W (0.5 % THD level)
• The average power is 0.1
× 110 W = 11 W
• The dissipated power at an output power of 11 W is approximately 5 W
• The total Rth(j-a) = (140 − 85) / 5 = 11 K/W, if the maximum expected Tamb = 85 °C
• The total thermal resistance Rth(j-a) = Rth(j-c) + Rth(c-h) + Rth(h-a)
• Rth(j-c) = 1 K/W, Rth(c-h) = 0.5 K/W to 1 K/W (dependent on mounting), so Rth(h-a) would
then be: 11
− (1 + 1) = 9 K/W
12.6 Pumping effects
When the TDF8591TH is used in a SE configuration, a so-called pumping effect can
occur. During one switching interval, energy is taken from one supply (e.g. VDDA1), while a
part of that energy is delivered back to the other supply line (e.g. VSSA1) and visa versa.
When the voltage supply source cannot sink energy, the voltage across the output
capacitors of that voltage supply source will increase: the supply voltage is pumped to
higher levels. The voltage increase caused by the pumping effect depends on:
• Speaker impedance
• Supply voltage
• Audio signal frequency
• Value of decoupling capacitors on supply lines
• Source and sink currents of other channels
R
th j a
–
()
T
j
T
amb
–
P
------------------------
=



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