TDF8591TH datasheet(18/34 Pages) NXP

18 / 34 page

TDF8591TH_1

Product data sheet

Rev. 01 — 5 March 2008

18 of 34

NXP Semiconductors

TDF8591TH

× 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D ampliﬁer

The pumping effect should not cause a malfunction of either the audio ampliﬁer and/or the

voltage supply source. For instance, this malfunction can be caused by triggering of the

UVP, OVP or UBP of the ampliﬁer. Best remedy for pumping effects is to use the

TDF8591TH in a mono full-bridge application. In case of dual half-bridge application adapt

the supply voltage (e.g. increase supply decoupling capacitors).

12.7 Application schematics

For SE application (see Figure 10):

• A solid ground plane around the TDF8591TH is necessary to prevent emission

• 100 nF Surface Mounted Device (SMD) capacitors must be placed as close as

possible to the supply voltage pins of the TDF8591TH

• The heatsink of the HSOP24 package of the TDF8591TH is connected to pin VSSD

• The external heatsink must be connected to the ground plane

• Use a thermal conductive, electrically isolating Sil-Pad between the backside of the

TDF8591TH and the external heatsink

For BTL application (see Figure 11):

• A solid ground plane around the TDF8591TH is necessary to prevent emission

• 100 nF SMD capacitors must be placed as close as possible to the supply voltage

pins of the TDF8591TH

• The heatsink of the HSOP24 package of the TDF8591TH is connected to pin VSSD

• The external heatsink must be connected to the ground plane

• Use a thermal conductive, electrically isolating Sil-Pad between the backside of the

TDF8591TH and the external heatsink

• The differential inputs enable the best system level audio performance with

unbalanced signal sources. In case of hum due to ﬂoating inputs connect the

shielding or source ground to the ampliﬁer ground

• Minimum total required capacity per supply voltage line is 3300

µF

TDF8591TH 데이터시트(PDF) 18 Page - NXP Semiconductors