MRF9030LR1 datasheet(5/10 Pages) FREESCALE

부품명	MRF9030LR1

상세설명	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PDF	10 Pages

Scroll/Zoom	100%

제조업체	FREESCALE [Freescale Semiconductor, Inc]

홈페이지	http://www.freescale.com

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5 / 10 page

MRF9030LR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

960

930

−38

IRL

Gps

IMD

VDD = 26 Vdc

Pout = 30 W (PEP)

IDQ = 250 mA

Two−Tone, 100 kHz Tone Spacing

f, FREQUENCY (MHz)

Figure 3. Class AB Broadband Circuit Performance

−30

−32

−34

−36

955

950

945

940

935

−18

−10

−12

−14

−16

100

IDQ = 375 mA

300 mA

VDD = 26 Vdc

f1 = 945 MHz, f2 = 945.1 MHz

Pout, OUTPUT POWER (WATTS) PEP

Figure 4. Power Gain versus Output Power

19.5

18.5

17.5

250 mA

200 mA

100

−60

−50

IDQ = 200 mA

300 mA

VDD = 26 Vdc

f1 = 945 MHz, f2 = 945.1 MHz

Pout, OUTPUT POWER (WATTS) PEP

Figure 5. Intermodulation Distortion versus

Output Power

−20

−30

−40

375 mA

250 mA

100

−70

3rd Order

VDD = 26 Vdc

IDQ = 250 mA

f1 = 945 MHz, f2 = 945.1 MHz

Pout, OUTPUT POWER (WATTS) PEP

Figure 6. Intermodulation Distortion Products

versus Output Power

−10

−20

−30

−40

−50

−60

5th Order

7th Order

100

0.1

Gps

VDD = 26 Vdc

IDQ = 250 mA

f = 945 MHz

Pout, OUTPUT POWER (WATTS) AVG.

Figure 7. Power Gain and Efficiency versus

Output Power

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