| 전자부품 데이터시트 검색엔진 |
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MRF9030LR1 데이터시트(PDF) 6 Page - Freescale Semiconductor, Inc |
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MRF9030LR1 데이터시트(HTML) 6 Page - Freescale Semiconductor, Inc |
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6 / 10 page ![]() 6 RF Device Data Freescale Semiconductor MRF9030LR1 TYPICAL CHARACTERISTICS 210 1010 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. 108 107 90 110 130 150 170 190 100 120 140 160 180 200 109 100 8 20 1 −60 60 Gps η IMD Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain, Efficiency and IMD versus Output Power 18 40 16 20 14 0 12 −20 10 −40 10 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz Figure 9. MTTF Factor versus Junction Temperature |
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