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MPC5604B 데이터시트(PDF) 58 Page - Freescale Semiconductor, Inc |
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MPC5604B 데이터시트(HTML) 58 Page - Freescale Semiconductor, Inc |
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58 / 106 page ![]() MPC5604B/C Microcontroller Data Sheet, Rev. 8 Electrical characteristics Freescale Semiconductor 58 4.11 Flash memory electrical characteristics 4.11.1 Program/Erase characteristics Table 24 shows the program and erase characteristics. Table 24. Program and erase specifications Symbol C Parameter Value Unit Min Typ1 1 Typical program and erase times assume nominal supply values and operation at 25 °C. Initial max2 2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage. Max3 3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values are characterized but not guaranteed. Tdwprogram CC C Double word (64 bits) program time 4 4 Actual hardware programming times. This does not include software overhead. —22 50 500 µs T16Kpperase 16 KB block pre-program and erase time — 300 500 5000 ms T32Kpperase 32 KB block pre-program and erase time — 400 600 5000 ms T128Kpperase 128 KB block pre-program and erase time — 800 1300 7500 ms Tesus CC D Erase Suspend Latency — — 30 30 µs Table 25. Flash module life Symbol C Parameter Conditions Value Unit Min Typ Max P/E CC C Number of program/erase cycles per block for 16 KB blocks over the operating temperature range (TJ) — 100,000 — — cycles P/E CC C Number of program/erase cycles per block for 32 KB blocks over the operating temperature range (TJ) — 10,000 100,000 — cycles P/E CC C Number of program/erase cycles per block for 128 KB blocks over the operating temperature range (TJ) — 1,000 100,000 — cycles Retention CC C Minimum data retention at 85 °C average ambient temperature1 Blocks with 0–1,000 P/E cycles 20 — — years Blocks with 1,001–10,000 P/E cycles 10 — — years Blocks with 10,001–100,000 P/E cycles 5— — years |
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