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MPC8377E 데이터시트(PDF) 16 Page - Freescale Semiconductor, Inc |
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MPC8377E 데이터시트(HTML) 16 Page - Freescale Semiconductor, Inc |
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16 / 126 page ![]() MPC8377E PowerQUICC II Pro Processor Hardware Specifications, Rev. 4 16 Freescale Semiconductor DDR1 and DDR2 SDRAM Table 12 provides the PLL lock times. 6 DDR1 and DDR2 SDRAM This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the MPC8377E. Note that DDR1 SDRAM is GVDD(typ) = 2.5 V and DDR2 SDRAM is GVDD(typ) = 1.8 V. 6.1 DDR1 and DDR2 SDRAM DC Electrical Characteristics Table 13 provides the recommended operating conditions for the DDR2 SDRAM component(s) of the device when GVDD(typ) = 1.8 V. Time for the device to turn off POR config signals with respect to the assertion of HRESET —4 ns 3 Time for the device to start driving functional output signals multiplexed with the POR configuration signals with respect to the negation of HRESET 1— tPCI_SYNC_IN 1, 3 Note: 1 t PCI_SYNC_IN is the clock period of the input clock applied to PCI_SYNC_IN. When the device is In PCI host mode the primary clock is applied to the CLKIN input, and PCI_SYNC_IN period depends on the value of CFG_CLKIN_DIV. See the MPC8379E Integrated Host Processor Reference Manual for more details. 2 t CLKIN is the clock period of the input clock applied to CLKIN. It is only valid when the device is in PCI host mode. See the MPC8379E Integrated Host Processor Reference Manual for more details. 3 POR config signals consists of CFG_RESET_SOURCE[0:3], CFG_LBMUX, and CFG_CLKIN_DIV. Table 12. PLL Lock Times Parameter Min Max Unit Notes PLL lock times — 100 μs— Note: • The device guarantees the PLL lock if the clock settings are within spec range. The core clock also depends on the core PLL ratio. See Section 23, “Clocking,” for more information. Table 13. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V Parameter Symbol Min Max Unit Notes I/O supply voltage GVDD 1.71 1.89 V 1 I/O reference voltage MVREF 0.49 × GV DD 0.51 × GV DD V2, 5 I/O termination voltage VTT MVREF –0.04 MVREF +0.04 V 3 Input high voltage VIH MVREF + 0.140 GVDD +0.3 V — Input low voltage VIL –0.3 MVREF –0.140 V — Output leakage current IOZ –40 40 μA4 Output high current (VOUT =1.40V) IOH –13.4 — mA — Table 11. RESET Initialization Timing Specifications (continued) Parameter/Condition Min Max Unit Notes |
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