| 전자부품 데이터시트 검색엔진 |
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LA1136NM 데이터시트(PDF) 16 Page - Sanyo Semicon Device |
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LA1136NM 데이터시트(HTML) 16 Page - Sanyo Semicon Device |
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16 / 28 page ![]() 6. Wideband AGC Sensitivity The wideband AGC circuit two-signal sensitivity and shortwave interference suppression characteristics have been achieved by reducing the sensitivity by approximately 10 dB from that of previous devices. If a FET with low gm and high IDSS is used, the sensitivity can be increased by increasing the external sensitivity adjustment resistor (30 Ω). However, the voltage drop across this resistor can cause the cascade AGC transistor to saturate. Therefore, if the sensitivity is to be increased by a large amount, a choke coil should be added as shown in the figure below. 7. The local oscillation level increased during LW (approx. 50°C or greater) 27 k Ω should be added between pins 19 and 23 for LA1136N, and between pins 15 and 19 for LA1137N. Not necessary for MW. 8. Image Interference Reduction Image interference in the alignment circuit can be reduced by up to 70 dB at fr = 1.4 MHz by injecting a 2.3 MHz trap signal into the primary coil. Note that this technique reduces the sensitivities at frequencies above 1.4 MHz. 9. Upgraded Features of LA1136 and LA1137 to LA1136N and LA1137N Upgraded features LA1136, LA1137 LA1136N, LA1137N IF count buffer output voltage 74 dBµ, zero modulation, fr = 1 MHz when STOP RQ=0V Test circuit LA1137N 80 mVp-p 1.5 mVp-p Signal detector output voltage when VCC OFF Test circuit LA1137N 0.7 V 5 V Unit (resistance: Ω, capacitance: F) Unit (resistance: Ω, capacitance: F) LA1136N, 1136NM, 1137N, 1137NM No. 3507-16/28 |
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