DMN3030LSS-13 datasheet(1/6 Pages) DIODES

부품명	DMN3030LSS-13

상세설명	SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	6 Pages

Scroll/Zoom	100%

제조업체	DIODES [Diodes Incorporated]

홈페이지	http://www.diodes.com

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1 / 6 page

DMN3030LSS

Document number: DS31261 Rev. 10 - 2

1 of 6

www.diodes.com

July 2009

DMN3030LSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features

•

Low On-Resistance

•

18m

Ω @ VGS = 10V

•

30m

Ω @ VGS = 4.5V

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 2)

•

"Green" Device (Note 4)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SO-8

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.072g (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±25

V

Drain Current (Note 1)

Steady

State

TA = 25°C

TA = 70°C

ID

9

6.75

A

Pulsed Drain Current (Note 3)

IDM

40

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

PD

2.5

W

Thermal Resistance, Junction to Ambient

RθJA

50

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

1.

Device mounted on 2 oz copper pad layout with RθJA = 50°C/W.

2.

No purposefully added lead.

3.

Pulse width

≤10μS, Duty Cycle ≤1%.

4.

Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SO-8

TOP VIEW

Internal Schematic

TOP VIEW

S

D

G

D

S

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