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DMN3030LSS-13 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 DMN3030LSS-13
상세설명  SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3030LSS-13 데이터시트(HTML) 2 Page - Diodes Incorporated

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DMN3030LSS
Document number: DS31261 Rev. 10 - 2
2 of 6
www.diodes.com
July 2009
© Diodes Incorporated
DMN3030LSS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
30
⎯
⎯
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1
μA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
⎯
⎯
±100
±1
nA
μA
VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
1
⎯
2.1
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
15.7
26.4
18
30
m
Ω
VGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
Forward Transconductance
gfs
⎯
5.8
⎯
S
VDS = 10V, ID = 9A
Diode Forward Voltage (Note 5)
VSD
0.5
0.7
1.2
V
VGS = 0V, IS = 2.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
741
⎯
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
124
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
95
⎯
pF
Gate Resistance
RG
0.30
0.88
1.5
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Qg
⎯
7.6
12
nC
VDS = 15V, VGS = 4.5V, ID = 9A
⎯
16.7
25
VDS = 15V, VGS = 10V, ID = 9A
Gate-Source Charge
Qgs
⎯
1.9
⎯
Gate-Drain Charge
Qgd
⎯
5.2
⎯
Turn-On Delay Time
td(on)
⎯
4.0
⎯
ns
VGS = 10V, VDS = 15V,
RL = 15Ω, RG = 6Ω
Rise Time
tr
⎯
4.4
⎯
Turn-Off Delay Time
td(off)
⎯
23.0
⎯
Fall Time
tf
⎯
9.4
⎯
Notes:
5. Short duration pulse test used to minimize self-heating effect.
Fig. 1 Typical Output Characteristic
0
3
6
9
12
15
18
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
, DRAIN-SOURCE VOLTAGE (V)
DS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 4.5V
GS
V
= 10V
GS
Fig. 2 Typical Transfer Characteristics
0
2
4
6
8
10
12
14
16
1.5
2
2.5
3
3.5
V
, GATE SOURCE VOLTAGE (V)
GS
V
= 5V
DS



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