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LC35256DM 데이터시트(PDF) 5 Page - Sanyo Semicon Device

부품명 LC35256DM
상세설명  Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM
PDF  8 Pages
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제조업체  SANYO [Sanyo Semicon Device]
홈페이지  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LC35256DM 데이터시트(HTML) 5 Page - Sanyo Semicon Device

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No. 5823-5/8
LC35256D-10, LC35256DM, DT-70/10
Note *: Reference value at Ta = 25°C, VCC = 3 V.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ*
max
Input leakage current
ILI
VIN = 0 to VCC
–1.0
+1.0
µA
Output leakage current
ILO
VCE = VIH or VOE = VIH or VWE = VIL, VI/O = 0 to VCC
–1.0
+1.0
µA
High-level output voltage
VOH
IOH = –0.5 mA
VCC – 0.2
V
Low-level output voltage
VOL
IOL = 1.0 mA
0.2
V
Operating
VCC – 0.2 V/
VCE = VIL, VIN = VIH or VIL,
min
LC35256DM, DT-70
7
10
mA
current drain
0.2 V inputs
ICCA4
II/O = 0 mA, Duty 100%
cycle LC35256D, DM, DT-10
3
5
mA
1 µs cycle
1.5
2.5
mA
Standby mode
VCC – 0.2 V/
VCE ≥ VCC – 0.2 V,
Ta
≤ 25°C
0.01
µA
current drain
0.2 V inputs
ICCS1
VIN = 0 to VCC
Ta
≤ 60°C
0.8
µA
Ta
≤ 85°C
4.0
µA
DC Electrical Characteristics at Ta = –40 to +85°C, VCC = 2.7 to 3.6 V
AC Electrical Characteristics at Ta = –40 to +85°C, VCC = 2.7 to 3.6 V
LC35256D, DM, DT
Parameter
Symbol
-70*
-10
Unit
min
max
min
max
Read cycle time
tRC
200
500
ns
Address access time
tAA
200
500
ns
CE access time
tCA
200
500
ns
OE access time
tOA
100
250
ns
Output hold time
tOH
20
20
ns
CE output enable time
tCOE
20
20
ns
OE output enable time
tOOE
10
10
ns
CE output disable time
tCOD
60
120
ns
OE output disable time
tOOD
50
100
ns
Read Cycle
Note *: Specification values for the LC35256DM and LC35256DT.
AC test conditions
Input pulse voltage level
VIH = VCC – 0.2 V, VIL = 0.2 V
Input rise and fall times
10 ns
Input and output timing level
1.5 V
Output load
LC35256DM, DT-70
30 pF (Including jig capacitances.)
LC35256D, DM, DT-10
100 pF (Including jig capacitances.)



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