| 전자부품 데이터시트 검색엔진 |
|
LC35256DM 데이터시트(PDF) 7 Page - Sanyo Semicon Device |
|
|
|||||||||||||||||||||||||||||
LC35256DM 데이터시트(HTML) 7 Page - Sanyo Semicon Device |
|
7 / 8 page ![]() No. 5823-7/8 LC35256D-10, LC35256DM, DT-70/10 Write Cycle 1 (WE write) *6 Write Cycle 2 (CE write) *6 Notes: 1. Applications must set WE high during the read cycle. 2. External circuits in the application must not apply reverse phase signals to the DOUT pins when those pins are in the output state. 3. The time tWP is the period when CE and WE are both low. It is defined as the time from the fall of WE to the rise of CE or the rise of WE, whichever occurs first. 4. The time tCW is the period when CE and WE are both low. It is defined as the time from the fall of CE to the rise of CE or the rise of WE, whichever occurs first. 5. The data outputs (DOUT) go to the high-impedance state if any one of the following conditions hold: OE is high, CE is high, or WE is low. 6. OE must be held either high or low during the write cycle. 7. The DOUT pins have the same phase as the write cycle write data. *5 *5 |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |