MPC5674F datasheet(33/132 Pages) FREESCALE

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Electrical Characteristics

MPC5674F Microcontroller Data Sheet, Rev. 6

Freescale Semiconductor

VRL Differential Voltage

VRL –VSSA

–100

100

Analog Reference High Voltage

VRH

VDDA –100

VDDA

VREF Differential Voltage

VRH –VRL

4.75

5.25

VSSSYN to VSS Differential Voltage

VSSSYN –VSS

–100

100

Operating Temperature Range—Ambient (Packaged)

TA (TL to TH)

–40.0

125.0

οC

Slew rate on power supply pins

—

V/ms

1 These specifications are design targets and subject to change per device characterization.

2 Voltage overshoots during a high-to-low or low-to-high transition must not exceed 10 seconds per instance.

3 2.0 V for 10 hours cumulative time, 1.2 V +10% for time remaining.

4 Assumed with DC load.

5 5.3 V for 10 hours cumulative time, 3.3 V +10% for time remaining.

6 6.4 V for 10 hours cumulative time, 5.0 V +10% for time remaining.

7 V

STBY below 0.95 V the RAM will not retain states, but will be operational. VSTBY can be 0 V when bypass standby mode.

8 Regulator is functional with derated performance, with supply voltage down to 4.0 V for system with V

DDREG = 4.5 V (min).

9 2.7 V minimum operating voltage allowed during vehicle crank for system with V

DDREG = 3.0 V (min). Normal operating voltage

should be either VDDREG = 3.0 V (min) or 4.5 V (min) depending on the user regulation voltage system selected.

10 Required to be supplied when 3.3 V regulator is disabled. See Section 4.5, “PMC/POR/LVI Electrical Specifications.”

11 I

OH_F = {12,20,30,40} mA and IOL_F = {24,40,50,65} mA for {00,01,10,11} drive mode with VDDE =3.0 V

12 I

OH_S = {11.6} mA and IOL_S = {17.7} mA for {medium} I/O with VDDE =4.5 V;

IOH_S = {5.4} mA and IOL_S = {8.1} mA for {medium} I/O with VDDE =3.0 V

13 Applies to D_CLKOUT, external bus pins, and Nexus pins.

14 Applies to the FCK, SDI, SDO, and SDS_B pins.

15 V

STBY current specified at 1.0 V at a junction temperature of 85

oC. V

STBY current is 700 µA maximum at a junction temperature

of 150 oC.

16 Preliminary. Specification pending typical and/or high-use Runidd pattern simulation as well as final silicon characterization.

900 mA based on transistor count estimate at Worst Case (wcs) process and temperature condition.

17 Power requirements for the V

DD33 supply depend on the frequency of operation and load of all I/O pins, and the voltages on

the I/O segments. See Section 4.7.2, “I/O Pad VDD33 Current Specifications,” for information on both fast (F, FS) and medium

(MH) pads. Also refer to Table 16 for values to calculate power dissipation for specific operation.

18 This value is a target that is subject to change.

19 This value allows a 5 V reference to supply ADC + REF.

20 Power requirements for each I/O segment depend on the frequency of operation and load of the I/O pins on a particular I/O

segment, and the voltage of the I/O segment. See Section 4.7.1, “I/O Pad Current Specifications,” for information on I/O pad

power. Also refer to Table 15 for values to calculate power dissipation for specific operation. The total power consumption of

an I/O segment is the sum of the individual power consumptions for each pin on the segment.

21 Absolute value of current, measured at V

IL and VIH.

22 Absolute value of current, measured at V

IL and VIH.

23 Weak pull up/down inactive. Measured at V

DDE = 3.6 V and VDDEH = 5.25 V. Applies to pad types F and MH.

24 Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each

8to 12 oC, in the ambient temperature range of 50 to 125 oC. Applies to pad types AE and AE/up-down. See Appendix A,

Signal Properties and Muxing.

Table 14. DC Electrical Specifications1 (continued)

Spec

Characteristic

Symbol

Min

Max

Unit

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