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2N40 데이터시트(PDF) 2 Page - Unisonic Technologies |
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2N40 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() 2N40 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-524.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous ID 2 A Drain Current Pulsed IDM 7 A Avalanche Current IAR 2.5 A Single Pulsed Avalanche Energy EAS 100 mJ Power Dissipation PD 25 W Linear Derating Factor P △ D/T △ mb 0.2 W/°C Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 5 °C/W |
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