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2N40 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 2N40
상세설명  2 Amps, 400 Volts N-CHANNEL POWER MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N40 데이터시트(HTML) 3 Page - Unisonic Technologies

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2N40
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-524.a
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
400
V
Breakdown Voltage Temperature
Coefficient
BV
△
DSS/T
△ J VDS=VGS, ID=250µA
0.45
V/°C
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
1
25
µA
Forward
VGS=+30V, VDS=0V
+10 +200 nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-30V, VDS=0V
-10 -200 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
3.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.25A
2.0
3.5
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
240
pF
Output Capacitance
COSS
44
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
26
pF
SWITCHING PARAMETERS
Total Gate Charge
QG(TOT)
20
25
nC
Gate to Source Charge
QGS
2
3
nC
Gate to Drain Charge
QGD
VGS=10V, VDS=320V, ID=2.5A
8
12
nC
Turn-ON Delay Time
tD(ON)
10
ns
Rise Time
tR
25
ns
Turn-OFF Delay Time
tD(OFF)
46
ns
Fall-Time
tF
VDD=200V, ID=2.5A, RG=24Ω,
RD=78 Ω
25
ns
Internal Drain Inductance
LD
Measured from drain lead 6
mm from package to centre of
die
4.5
nH
Internal Source Inductance
LS
Measured from source lead 6
mm from package to source
bond pad
7.5
nH
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
2.5
A
Maximum Body-Diode Pulsed Current
ISM
TC=25°C
10
A
Drain-Source Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
1.2
V
Body Diode Reverse Recovery Time
tRR
200
ns
Body Diode Reverse Recovery Charge
QRR
IS=2.5A, VGS=0V, dI/dt=100A/µs
2.0
µC



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