SILICON EPITAXIAL

PLANAR PNP TRANSISTOR

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verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

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Document Number 9097

Issue 2

Page 1 of 5

MG9410, MG9410-R

A = 25°C unless otherwise stated)

MG9410

MG9410-R

VCBO

Collector – Base Voltage

-230V

-260V

VCEO

Collector – Emitter Voltage

-230V

-260V

VEBO

Emitter – Base Voltage

-5V

IC

Continuous Collector Current

-15A

IB

Base Current

-4A

PD

Total Power Dissipation at

TA = 25°C

200W

TJ

Maximum Junction Temperature

150°C

Tstg

Storage Temperature Range

-55 to +150°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

0.63

°C/W