SILICON EPITAXIAL

PNP TRANSISTOR

MG9410, MG9410-R

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9097

Issue 2

Page 2 of 5

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

ICBO

Collector-Cut-Off Current

MG9410

VCB = -230V

-100

µA

MG9410-R

VCB = -260V

IEBO

Emitter-Cut-Off-Current

VEB = -5V

-100

µA

V(BR)CEO

Collector-Base Breakdown

Voltage

IC = -25mA

MG9410

-230

V

MG9410-R

-260

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = -5A

IB = -0.5A

-2.0

V

hFE

Forward-current transfer

ratio

IC = -5A

VCE = -4V

70

140

DYNAMIC CHARACTERISTICS

fT

Transition Frequency

IE = 2A

VCE = -12V

35

MHz

COB

Output Capacitance

VCB = -10V

f = 1.0MHz

500

pF

Notes

Notes

Notes

Notes

Pulse Width ≤ 300us, δ ≤ 2%