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HVLED805 데이터시트(PDF) 6 Page - STMicroelectronics

부품명 HVLED805
상세설명  Off-line LED driver with primary-sensing
PDF  29 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

HVLED805 데이터시트(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
HVLED805
6/29
Doc ID 18077 Rev 1
VDMGH
Upper clamp voltage
IDMG = 1 mA
3.0
3.3
3.6
V
VDMGL
Lower clamp voltage
IDMG = - 1 mA
-90
-60
-30
mV
VDMGA
Arming voltage
positive-going edge
100
110
120
mV
VDMGT
Triggering voltage
negative-going edge
50
60
70
mV
IDMGON
Min. source current during MOSFET ON-time
-25
-50
-75
µA
TBLANK
Trigger blanking time after MOSFET’s turn-off
VCOMP ≥ 1.3V
6
µs
VCOMP = 0.9V
30
Line feedforward
RFF
Equivalent feedforward resistor
IDMG = 1mA
45
Ω
Transconductance error amplifier
VREF
Voltage reference
Tj = 25 °C (1)
2.45
2.51
2.57
V
Tj = -25 to 125°C and
Vcc=12V to 23V (1)
2.4
2.6
gm
Transconductance
ΔI
COMP = ±10 µA
VCOMP = 1.65 V
1.3
2.2
3.2
mS
Gv
Voltage gain
Open loop
73
dB
GB
Gain-bandwidth product
500
kHz
ICOMP
Source current
VDMG = 2.3V, VCOMP = 1.65V
70
100
µA
Sink current
VDMG = 2.7V, VCOMP = 1.65V
400
750
µA
VCOMPH Upper COMP voltage
VDMG = 2.3V
2.7
V
VCOMPL Lower COMP voltage
VDMG = 2.7V
0.7
V
VCOMPBM Burst-mode threshold
1
V
Hys
Burst-mode hysteresis
65
mV
Current reference
VILEDx
Maximum value
VCOMP = VCOMPL
(1)
1.5
1.6
1.7
V
VCLED
Current reference voltage
0.192
0.2
0.208
V
Current sense
tLEB
Leading-edge blanking
200
250
300
ns
td(H-L)
Delay-to-output
300
ns
VCSx
Max. clamp value
(1) dVcs/dt = 200 mV/µs
0.7
0.75
0.8
V
VCSdis
Hiccup-mode OCP level
(1)
0.92
1
1.08
V
1.
Parameters tracking each other
Table 4.
Electrical characteristics (continued)
Symbol
Parameter
Test condition
Min.
Typ. Max. Unit



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