STL17N3LLH6 datasheet(1/13 Pages) STMICROELECTRONICS

부품명	STL17N3LLH6

상세설명	N-channel 30 V, 0.0038 廓, 17 A PowerFLAT??3.3x3.3) STripFET??VI DeepGATE??Power MOSFET

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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1 / 13 page

November 2010

Doc ID 15535 Rev 3

1/13

13

STL17N3LLH6

N-channel 30 V, 0.0038

Ω, 17 A PowerFLAT™(3.3x3.3)

STripFET™ VI DeepGATE™ Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

■ Low gate drive power losses

■ Very low switching gate charge

Application

Switching applications

Description

This product utilizes the 6th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure. The resulting Power

MOSFET exhibits the lowest RDS(on) in a standard

package, that makes it suitable for the most

demanding DC-DC converter applications, where

high power density has to be achieved.

Figure 1.

Pin-out configuration

Order code

VDSS

RDS(on)

max.

ID

STL17N3LLH6

30 V

0.0045

Ω

17 A (1)

1.

The value is rated according Rthj-pcb

PowerFLAT™ (3.3 x 3.3)

12

3

4

SS

S

G

8

76

5

DD

D

BOTTOM VIEW

Table 1.

Device summary

Order code

Marking

Package

Packaging

STL17N3LLH6

17N3L

PowerFLAT™ (3.3 x 3.3)

Tape and reel

www.st.com

유사한 부품 번호 - STL17N3LLH6

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