| 전자부품 데이터시트 검색엔진 |
|
STL17N3LLH6 데이터시트(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STL17N3LLH6 데이터시트(HTML) 5 Page - STMicroelectronics |
|
5 / 13 page ![]() STL17N3LLH6 Electrical characteristics Doc ID 15535 Rev 3 5/13 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 17 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 68 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 17 A, VGS = 0 - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs, VDD= 25 V - 24 16.8 1.4 ns nC A |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |