PC3H41XNIP datasheet(2/5 Pages) SHARP

2 / 5 page

PC3H41X NIP Series/PC3Q410 NIP

s Electro-optical Characteristics

Fig.1 Test Circuit for Common Mode Rejection Voltage

Fig.2 Forward Current vs. Ambient

Temperature

Parameter

Symbol

MIN.

TYP.

MAX.

Unit

Forward voltage

Collector current

Isolation resistance

Floating capacitance

Response time

Common mode rejection voltage

Terminal capacitance

Collector dark current

Emitter-collector breakdown voltage

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Rise time

Fall time

ICEO

BVCEO

BVECO

RISO

VCE (sat)

CMR

Conditions

=±10mA

=±0.5mA, VCE=5V

=±10mA, IC=1mA

=0, f=1kHz

VCE

=50V, IF=0

IC=0.1mA, IF=0

IE=10

µA, IF=0

DC500V 40 to 60%RH

=0, f=1MHz

VCE

=2V, IC=2mA, RL=100Ω

=25°C, RL=470Ω, VCM=1.5kV (peak),

=0mA, VCC=9V, Vnp=100mV

1.4

−

0.25

×1010

1.2

−

2.0

250

−

0.6

1.0

−

100

−

0.2

−

µs

kV/

µs

Ω

(Ta

=25°C)

*1 Refer to Fig.1.

VCM

Vcp

Vnp

(dV/dt)

Vnp

VCC

VCM

1) Vcp : Voltage which is generated by displacement current in floating

capacitance between primary and secondary side.

(Vcp Nearly = dV/dt×Cf×RL)

VCM : High wave

pulse

RL=470Ω

VCC=9V







Ambient temperature Ta (°C)

−30

100

125

Fig.3 Diode Power Dissipation vs. Ambient

Temperature

Ambient temperature Ta (°C)

−30

100

125

PC3H41XNIP 데이터시트(PDF) 2 Page - Sharp Corporation

PC3H41XNIP 데이터시트(HTML) 2 Page - Sharp Corporation

Html Pages

1 2 3 4 5

데이터시트 다운로드

링크 URL