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BAS16S 데이터시트(PDF) 1 Page - Siemens Semiconductor Group |
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BAS16S 데이터시트(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 4 page ![]() BAS 16S Semiconductor Group Apr-24-1998 1 Silicon Switching Diode Array • For high-speed switching applications • Internal (galvanic) isolated Diodes in one package Tape loading orientation VPS05604 6 3 1 5 4 2 Type Marking Ordering Code Pin Configuration Package BAS 16S A6s Q62702-A1241 1=A1 2=A2 3=A3 SOT-363 4=C3 5=C2 6=C1 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 75 V Peak reverse voltage VRM 85 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS = 85 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg 65 ...+150 Thermal Resistance Junction - ambient 1) RthJA ≤ 530 K/W Junction - soldering point RthJS ≤ 260 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 1998-11-01 |
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