SIP12101 datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 73057

S09-1453-Rev. B, 03-Aug-09

www.vishay.com

Vishay Siliconix

SiP12101

Notes:

a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

b. Typical values are for DESIGN AID ONLY, not guaranteed or subject to production testing.

c. Guaranteed by design.

d. Settling times, ts, apply after ten.

e. Bypass is a device mode of operation, in which, the device is in 100 % duty cycle.

PIN CONFIGURATION

SPECIFICATIONS

Parameter

Symbol

Test Conditions Unless Specified

- 40 °C to 85 °C, VIN = VDD, CIN = 10 µF, COUT = 4.7 µF

L = 2.2 µH, 2.6 V

≤ V

IN ≤ 5.5 V, R1 = 11.3 kΩ, R2 = 20 kΩ

Limits

Unit

Min.a

Typ.b

Max.a

Converter Operation

Maximum Output Current

ILOAD

VIN = 3.6 V

600

Dropout Voltagee

VDD

VIN = 2.6 V, IOUT = 600 mA

190

300

Closed Loop Bandwidth

300

kHz

Load Regulationc

VIN = 3.6 V, VOUT = 1.9 V at 25 °C

IOUT = 30 mA to 600 mA

0.5

Line Regulation

VOUT = 3.0 V, VIN = 3.5 V to 5.5 V

± 0.1

%/V

Maximum Inductor Peak Current

Limit

ILpk

1500

On Resistance - P-Channel and

N-Channel

RDS(on)

VIN = 3.6 V

250

Output Ripple Voltage

0.05

Ω C

OUT(ESR)

IOUT = 600 mA

mVp-p

Efficiency

VIN = 3.6 V, VOUT = 3.3 V

IOUT = 600 mA

Frequency

IOUT ≥ 30 mA

kHz

Supply Current

Input Supply Current

ISUPPLY

(VDD & VIN)

IOUT = 0 mA, VIN = 3.6 V, (not switching, FB = GND)

450

750

µA

Shutdown Supply Current

ISD

SD = Low

Thermal Shutdown

Thermal Shutdown Temperaturec

TJ(S/D)

165

°C

Thermal Hysteresisc

PGND

AGND

MSOP-10

AGND

VIN

REF

VDD

Top View

VDD

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