Document Number: 89030

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Revision: 10-May-11

1

This document is subject to change without notice.

High Current Density Surface Mount

Schottky Barrier Rectifier

SS8P2CL, SS8P3CL

Vishay General Semiconductor

New Product

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters, freewheeling

diodes,

DC/DC

converters

and

polarity

protection

application.

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020

• AEC-Q101 qualified

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

PRIMARY CHARACTERISTICS

2 x 4.0 A

20 V, 30 V

120 A

20 mJ

0.41 V

150 °C

TO-277A (SMPC)

K

2

1

Anode 1

Anode 2

Cathode

K

PARAMETER

SYMBOL

SS8P2CL

SS8P3CL

UNIT

Device marking code

S82C

S83C

Maximum repetitive peak reverse voltage

20

30

V

Maximum average forward rectified current (fig. 1)

total device

8.0

A

per diode

4.0

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

120

A

20

mJ

Operating junction and storage temperature range

- 55 to + 150

°C