UD4614

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R502-147.B

N-Channel:

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note3)

6

A

Pulsed Drain Current (Note3)

20

A

2

W

Power Dissipation

1.28

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

P-Channel:

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-40

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note3)

-5

A

Pulsed Drain Current (Note3)

-20

A

2

W

Power Dissipation

1.28

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note3)

74

110

°C/W

N-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

40

V

Drain-Source Leakage Current

1

uA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

2.3

3

V

23.2

31

mΩ

Drain-Source On-State Resistance (Note2)

32.6

45

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

404

pF

Output Capacitance

95

pF

Reverse Transfer Capacitance

37

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note2)

4.2

ns

Turn-ON Rise Time

3.3

ns

Turn-OFF Delay Time

15.6

ns

Turn-OFF Fall Time

3

ns

Total Gate Charge (Note2)

8.3

nC

Gate-Source Charge

1.3

nC

Gate-Drain Charge

2.3

nC