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UD4614G-S08-R 데이터시트(PDF) 4 Page - Unisonic Technologies

부품명 UD4614G-S08-R
상세설명  DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL)
PDF  9 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UD4614G-S08-R 데이터시트(HTML) 4 Page - Unisonic Technologies

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UD4614
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 9
www.unisonic.com.tw
QW-R502-147.B
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
0.77
1
V
Diode Continuous Forward Current
IS
3
A
Reverse Recovery Time
tRR
20.5
ns
Reverse Recovery Charge
QRR
IDS=6A, dI/dt=100A/μs
14.5
nC
P-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-10mA
-40
V
Drain-Source Leakage Current
IDSS
VDS=-32V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-1
-1.9
-3
V
VGS=-10V, ID=-5A
34.7
45
mΩ
Drain-Source On-State Resistance (Note2)
RDS(ON)
VGS=-4.5V, ID=-2A
50.6
63
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
657
pF
Output Capacitance
COSS
143
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=-20V,f=1.0MHz
63
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
7.5
ns
Turn-ON Rise Time
tR
6.7
ns
Turn-OFF Delay Time
tD(OFF)
26
ns
Turn-OFF Fall Time
tF
VDS=-20V, VGS=-10V,
RG=3Ω, RL=4Ω
11.2
ns
Total Gate Charge (Note2)
QG
13.6
nC
Gate-Source Charge
QGS
1.8
nC
Gate-Drain Charge
QGD
VDS=-20V, VGS=-10V, ID=-5A
3.9
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-1A, VGS=0V
-0.75
-1
V
Diode Continuous Forward Current
IS
-3.2
A
Reverse Recovery Time
tRR
22.3
ns
Reverse Recovery Charge
QRR
IDS=-5A, dI/dt=100A/μs
15.2
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width≤300us, duty cycle ≤2%.
3. Surface Mounted on 1in
2 pad area, t≤10sec.



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