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UK3919-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UK3919-TN3-R
상세설명  SWITCHING N-CHANNEL POWER MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UK3919-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UK3919
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-200.A
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
25
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
±64
A
Pulsed Drain Current (Note1)
IDM
±256
A
Single Avalanche Current (Note2)
IAS
27
A
Single Avalanche Energy (Note2)
EAS
73
mJ
Total Power Dissipation
PD
36
W
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX
UNIT
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VDS =25 V, VGS =0 V
10
µA
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS =±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(OFF) VDS =10V, ID =1mA
2.0
2.5
3.0
V
VGS =10 V, ID =32 A
4.5
5.6
Drain-Source On-Resistance
RDS(ON)
VGS =5.0 V, ID =16 A
6.8
13.7
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
2050
Output Capacitance
COSS
460
Reverse Transfer Capacitance
CRSS
VDS =10V, VGS =0V, f=1MHz
330
pF
SWITCHING PARAMETERS
Gate to Source Charge
QG
42
Gate Charge at Threshold
QGS
8
Gate to Drain Charge
QGD
VDD =20V, VGS =10 V,ID =64 A
15
nC
Turn-ON Delay Time
tD(ON)
16
Turn-ON Rise Time
tR
19
Turn-OFF Delay Time
tD(OFF)
53
Turn-OFF Fall-Time
tF
VDD =12.5V, ID=32 A, VGS =10V,
RG =10 Ω
22
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Body Diode Forward Voltage
VSD
IF=64 A, VGS=0 V
0.97
V
Reverse Recovery Time
tRR
23
ns
Reverse Recovery Charge
QRR
IF= 64 A,VGS=0 V ,di/dt = 100 A/μs
11
nC
Notes: 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting TCH= 25℃, VDD = 12.5 V, RG = 25Ω, VGS = 20 → 0 V



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