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UK3919-TN3-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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UK3919-TN3-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD UK3919 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-200.A SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION This UK3919 N-Channel Logic Level MOSFET is produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially. The UK3919 is well suited for where low in-line power loss is needed in a very small outline surface mount package, such as low voltage and battery powered applications. FEATURES * RDS(ON) = 5.6mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain *Pb-free plating product number:UK3919L ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing UK3919-TN3-R UK3919L-TN3-R TO-252 G D S Tape Reel UK3919-TN3-T UK3919L-TN3-T TO-252 G D S Tube |
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