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UT3406G-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT3406G-AE3-R
상세설명  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3406G-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT3406
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-336.a
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (Ta=25°C)
ID
3.6
A
Pulsed Drain Current (Note 2)
IDM
15
A
Power Dissipation (Ta=25°C)
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
100
125
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS=24 V,VGS=0 V
1
µA
Gate-Source Leakage Current
IGSS
VGS=±20 V, VDS=0 V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VD S= VGS, ID=250 µA
1
1.9
3
V
On State Drain Current
ID(ON)
VGS =10 V, VDS =5 V
15
A
VGS=10 V, ID=3.6 A
50
65
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5 V, ID=2.8 A
75
105
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
288
375
pF
Output Capacitance
COSS
57
pF
Reverse Transfer Capacitance
CRSS
VDS=15V, VGS=0 V, f=1MHz
39
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
4.6
ns
Turn-ON Rise Time
tR
1.9
ns
Turn-OFF Delay Time
tD(OFF)
20.1
ns
Turn-OFF Fall-Time
tF
VGS=10V,VDS=15V, RL=2.2Ω,
RGEN=3Ω
2.6
ns
Total Gate Charge
QG
6.5
8.5
nC
Gate Source Charge
QGS
1.2
nC
Gate Drain Charge
QGD
VGS=10 V, VDS=15 V, ID=3.6A
1.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1 A
0.79
1
V
Maximum Body-Diode Continuous Current
IS
2.5
A
Body Diode Reverse Recovery Time
tRR
10.2
14
ns
Body Diode Reverse Recovery Charge
QRR
IF=3.6A, dI/dt=100A/μs
3.5
nC
Note: Surface mounted on 1 in
2 copper pad of FR4 board



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