UT3406G-AE3-R datasheet(1/3 Pages) UTC

부품명	UT3406G-AE3-R

상세설명	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

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제조업체	UTC [Unisonic Technologies]

홈페이지	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT3406

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-336.a

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UT3406 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and can be operated at low gate

voltages. This device is perfect fit for use as a load switch or in PWM

applications.

FEATURES

* VDS (V) = 30V

* ID = 3.6A (VGS = 10V)

* RDS(ON) <65mΩ (VGS = 10V)

* RDS(ON) <105mΩ (VGS = 4.5V)

* Halogen Free

SYMBOL

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

UT3406G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

346G

유사한 부품 번호 - UT3406G-AE3-R

제조업체	부품명	데이터시트	상세설명
VBsemi Electronics Co.,...	UT3406G-AE3-R	492Kb / 9P	N-Channel 30-V (D-S) MOSFET

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UT3406G-AE3-R 데이터시트(PDF) 1 Page - Unisonic Technologies

UT3406G-AE3-R 데이터시트(HTML) 1 Page - Unisonic Technologies

유사한 부품 번호 - UT3406G-AE3-R

유사한 설명 - UT3406G-AE3-R

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