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UTL1426-S08-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 UTL1426-S08-R
상세설명  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTL1426-S08-R 데이터시트(HTML) 3 Page - Unisonic Technologies

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UTL1426
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-264.A
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current
ID
46
A
Pulsed Drain Current
IDM
120
A
Avalanche Current
IAR
35
A
Repetitive avalanche energy L=0.3mH
EAR
184
mJ
Power Dissipation
TC=25°C
PD
43
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
53
64
Junction-to-Case
θJC
2.4
3.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=24V, VGS=0V
1
uA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±12V
0.1
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
1.55
2.5
V
On State Drain Current
ID(ON)
VDS=5V, VGS=10V
120
A
VGS=10V, ID=20A
8.5
10.5
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=20A
10.2
12.5
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1210 1452
pF
Output Capacitance
COSS
330
pF
Reverse Transfer Capacitance
CRSS
VDS=15V, VGS=0V, f=1MHz
85
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
10
ns
Turn-ON Rise Time
tR
6.3
ns
Turn-OFF Delay Time
tD(OFF)
21
ns
Turn-OFF Fall-Time
tF
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
2.8
ns
10V
22
28
nC
Total Gate Charge
4.5V
QG
10
nC
Gate Source Charge
QGS
3.7
nC
Gate Drain Charge
QGD
VDS=15V, VGS=10V, ID=20A
2.7
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A, VGS=0V
0.73
1.0
V
Maximum Body-Diode Continuous
Current
IS
46
A
Body Diode Reverse Recovery Time
tRR
36
45
ns
Body Diode Reverse Recovery
Charge
QRR
IF=20A, dI/dt=100A/μs
47
nC



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