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CPDT-5V0U-HF 데이터시트(PDF) 1 Page - Comchip Technology |
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CPDT-5V0U-HF 데이터시트(HTML) 1 Page - Comchip Technology |
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1 / 4 page ![]() Page 1 QW-JP004 REV:A Maximum Rating and Electrical Characteristics (at TA=25°C unless otherwise noted) Comchip Technology CO., LTD. Typ Parameter Min Max Unit Junction capacitance Diode breakdown voltage V ESD capability Clamping voltage 80 pF V kV 6.1 8 Peak pulse power W 80 Leakage current uA 1.0 60 8 Operation temperature 125 °C Forward voltage V 1.2 0.1 Conditions IR = 1mA VR = 0V,f = 1MHz IPP = 1A,TP=8/20us C = 150PF, R = 300ohm, forward and reverse 10 pulses VR = 3V IF =10mA IPP = 8A,TP=8/20us 10 Symbol VBD CT VC ESD PPP IL TJ VF Storage temperature TSTG °C 150 Dimensions in inches and (millimeter) SOT-23 3 1 2 0.119(3.00) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.002(0.05) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.008(0.20) min -55 -IEC61000-4-2 8kV(Contact), 15kV(air). -Surface mount package. -High component density. Mechanical data -Case: SOT-23 Standard package, molded plastic. -Marking code: E5U Features CPDT-5V0U-HF -Mounting position: Any. -Weight: 0.0078 gram (approx.). -Terminals: Solderable per MIL-STD-750D, method 2026. SMD ESD Protection Diode RoHS Device Halogen Free |
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