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IS61WV12816DALL/DALS 데이터시트(PDF) 17 Page - Integrated Silicon Solution, Inc

부품명 IS61WV12816DALL/DALS
상세설명  128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
PDF  21 Pages
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제조업체  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61WV12816DALL/DALS 데이터시트(HTML) 17 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
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Rev. D
06/21/2011
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IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
DATA RETENTION WAVEFORM (CE Controlled)
LOW POWER (IS61WV12816DALS/DBLS)
DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V)
Symbol
Parameter
Test Condition
Options
Min.
Typ.(1)
Max.
Unit
VDR
VDD for Data Retention
See Data Retention Waveform
2.0
—
3.6
V
IDR
Data Retention Current
VDD = 2.0V,
CE
≥ VDD – 0.2V
Com.
—
20
40
μA
Ind.
—
—
50
Auto.
75
tSDR
Data Retention Setup Time
See Data Retention Waveform
0
—
—
ns
tRDR
Recovery Time
See Data Retention Waveform
tRC
——
ns
Note 1: Typical values are measured at VDD = 3.0V, TA = 25OC and not 100% tested.
VDD
CE
≥ VDD - 0.2V
tSDR
tRDR
VDR
CE
GND
Data Retention Mode
DATA RETENTION SWITCHING CHARACTERISTICS (1.65V-2.2V)
Symbol
Parameter
Test Condition
Options
Min.
Typ.(1)
Max.
Unit
VDR
VDD for Data Retention
See Data Retention Waveform
1.2
—
3.6
V
IDR
Data Retention Current
VDD = 1.2V,
CE
≥ VDD – 0.2V
Com.
—
20
40
μA
Ind.
—
—
50
Auto.
—
—
75
tSDR
Data Retention Setup Time
See Data Retention Waveform
0
—
—
ns
tRDR
Recovery Time
See Data Retention Waveform
tRC
——
ns
Note 1: Typical values are measured at VDD = 1.8V, TA = 25OC and not 100% tested.



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