BAT48_11 datasheet(3/8 Pages) STMICROELECTRONICS

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BAT48

Characteristics

Doc ID 12634 Rev 2

3/8

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR

Breakdown reverse voltage

Tj = 25 °C

Ir = 25 µA

(1)

Reverse leakage current

Tj = 25 °C

VR = 1.5 V

µA

VR = 10 V

VR = 20 V

VR = 40 V

Tj = 60 °C

VR = 1.5 V

VR = 10 V

VR = 20 V

VR = 40 V

(2)

Forward voltage drop

Tj = 25 °C

IF = 0.1 mA

0.25

IF = 1 mA

0.3

IF = 10 mA

0.4

IF = 50 mA

0.5

IF = 200 mA

0.75

IF = 500 mA

0.9

Pulse test: tp = 5 ms, δ < 2 %

Pulse test: tp = 380 µs, δ < 2 %

Table 5.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Diode capacitance

VR = 0 V, F = 1 MHz

VR = 1 V, F = 1 MHz

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Average forward current versus

ambient temperature (

δ = 1)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

P(W)

δ=tp/T

δ = 1

δ = 0.05

(A)

F(AV)

δ = 0.1

δ = 0.2

δ = 0.5

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

100

125

150

(A)

F(AV)

(°C)

amb

δ=tp/T

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