| 전자부품 데이터시트 검색엔진 |
|
HST08 데이터시트(PDF) 2 Page - Hi-Sincerity Mocroelectronics |
|
|
|||||||||||||||||||||||||||||
HST08 데이터시트(HTML) 2 Page - Hi-Sincerity Mocroelectronics |
|
2 / 4 page ![]() HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200903 Issued Date : 2009.08.15 Revised Date : Page No. : 2/4 HST08 HSMC Product Specification Electrical Characteristics (Ta=25°C, unless otherwise stated,) Rank min Rank max Symbol Parameter Quadrant C B C B Unit I - II - III 25 50 mA IGT Gate Trigger Current (VD=12V) IV 50 100 mA I - III- IV 40 50 mA IL Latching Current (IT=1.2 IGT,Tj=25°C) II 80 100 mA IH Holding Current(IT=0.1A,) ALL 25 50 mA VTM On-state Voltage (IT=8.5A,) 1.55 V VGT Gate Trigger Voltage (VD=12V, Tj=25°C) 1.5 V Off-state Leakage Current TC=25°C 10 uA ID (VD = VDRM(max)) TC=125°C 1 mA Critical rate of rise of off-state voltage dVD/dt VDM=400VTj= 125°C; exponential waveform; gate open circuit 200 400 V/us Thermal Resistances Symbol Parameter Min. Typ Max. Unit Rth j-c Thermal resistance junction to mounting base 1.6 °C/W |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |