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HST08 데이터시트(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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HST08 데이터시트(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
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1 / 4 page ![]() HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200903 Issued Date : 2009.08.15 Revised Date : Page No. : 1/4 HST08 HSMC Product Specification HST08 TRIAC 600V,8A Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. TO-220AB Pin Configuration Pin Description 1 Main terminal 1 2 Main terminal 2 3 Gate tab Main terminal 2 12 3 tab Symbol T2 T1 G Limtiing Values Symbol Parameter Min. Max. Units VDRM Repetitive peak off-state voltages - 600 V IT(RMS) RMS on-state current - 8 A ITSM Non-repetitive peak on-state current(F=50Hz,tp=20ms) - 80 A I 2t I 2t for fusing (IT=10ms) - 36 A 2S dIT/dt Repetitive rate of rise of on-state current after triggering (F=50Hz,IG=50mA,dIg/dt=0.1us) - 50 A/us IGM Peak gate current(tp=20us,Tj=125 °C) - 4 A PGM Peak gate power(tp=20us,Tj=125 °C) - 10 W PG(AV) Average gate power (Tj=125 °C) - 1 W Tstg Storage Temperature Range -40 150 °C Tj Operating junction temperature -40 125 °C |
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