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MJ802 데이터시트(PDF) 1 Page - Motorola, Inc |
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MJ802 데이터시트(HTML) 1 Page - Motorola, Inc |
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1 / 4 page ![]() 1 Motorola Bipolar Power Transistor Device Data High-Power NPN Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25–100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCER 100 Vdc Collector–Base Voltage VCB 100 Vdc Collector–Emitter Voltage VCEO 90 Vdc Emitter–Base Voltage VEB 4.0 Vdc Collector Current IC 30 Adc Base Current IB 7.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25 _C PD 200 1.14 Watts W/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 0.875 _C/W 200 150 100 50 0 40 60 120 140 200 Figure 1. Power–Temperature Derating Curve TC, CASE TEMPERATURE (°C) 0 20 80 100 160 180 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ802/D © Motorola, Inc. 1995 MJ802 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS CASE 1–07 TO–204AA (TO–3) REV 7 |
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