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SSL4120 데이터시트(PDF) 21 Page - NXP Semiconductors

부품명 SSL4120
상세설명  Resonant power supply controller IC with PFC for LED lighting
PDF  48 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
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SSL4120 데이터시트(HTML) 21 Page - NXP Semiconductors

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SSL4120
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 1 November 2012
21 of 48
NXP Semiconductors
SSL4120
Resonant power supply controller IC with PFC for LED lighting
7.8.3 HBC switch control
HBC switch control determines when the MOSFETs switch on and off. It uses the output
from several other blocks.
A divider is used to alternate switching of the high and low-side MOSFETs for each
oscillator cycle. The oscillator frequency is twice the half-bridge frequency.
The controlled oscillator determines the switch-off point.
Adaptive non-overlap time sensing determines the switch-on point. This function is
the adaptive non-overlap time.
Several protection circuits and the state of the SSHBC/EN input pin specify if the
resonant converter is allowed to start switching.
Figure 9 provides an overview of typical switching behavior.
7.8.4 HBC Adaptive Non-Overlap (ANO) time function (HB pin)
7.8.4.1
Inductive mode (normal operation)
The high efficiency characteristic of a resonant converter is the result of Zero-Voltage
Switching (ZVS) of the power MOSFETs. ZVS is also called soft switching. To allow soft
switching, a small non-overlap time is required between the high-side on-times and
low-side MOSFETs. During this non-overlap time, the primary resonant current charges or
discharges the half-bridge capacitance between ground and Vboost.
After the charge or discharge cycles, the MOSFET body diode starts conducting and
because the voltage across the MOSFET is zero, when the MOSFET is switched on there
are no switching losses. This operating mode is called inductive mode. In inductive mode,
the switching frequency is above the resonance frequency and the resonant tank has an
inductive impedance.
Fig 9.
Switching behavior of the HBC
GATELS
GATEHS
HB
ITr(HBC)
CFMIN
t
Vboost
0
0
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