MMDF2C03HD

6

Motorola TMOS Power MOSFET Transistor Device Data

N–Channel

P–Channel

Figure 7. Capacitance Variation

Figure 7. Capacitance Variation

10

0

10

15

25

TJ = 25°C

VDS = 0 V VGS = 0 V

1000

800

600

400

200

0

20

Ciss

Coss

Crss

5

5

Ciss

Crss

30

1200

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)

400

600

800

1200

1000

10

0

10

15

20

30

VGS

VDS

5

5

Crss

TJ = 25°C

200

25

Ciss

VDS = 0 V VGS = 0 V

Ciss

Coss

Crss

0

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)

VGS

VDS

Figure 8. Gate–To–Source and Drain–To–Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

Figure 8. Gate–To–Source and Drain–To–Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

Qg, TOTAL GATE CHARGE (nC)

0

2

4

6

8

ID = 3 A

TJ = 25°C

VGS

6

3

0

12

9

24

18

12

6

0

VDS

QT

Q1

Q2

Q3

10

12

RG, GATE RESISTANCE (OHMS)

1000

1

100

10

1

VDD = 15 V

ID = 3 A

VGS = 10 V

TJ = 25°C

td(on)

tr

100

10

td(off)

tf

24

20

16

12

8

4

0

0

10

6

2

0

12

8

4

2

4

6

8

16

ID = 2 A

TJ = 25°C

10

12

14

VDS

VGS

QT

Q2

Q3

Q1

RG, GATE RESISTANCE (OHMS)

1

10

100

1000

100

10

1

VDD = 15 V

ID = 2 A

VGS = 10 V

TJ = 25°C

tr

tf

td(off)

td(on)

Qg, TOTAL GATE CHARGE (nC)