MMDF2C03HD

9

Motorola TMOS Power MOSFET Transistor Device Data

N–Channel

P–Channel

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

0

25

50

75

100

125

150

ID = 9 A

250

150

350

100

50

200

300

TJ, STARTING JUNCTION TEMPERATURE (°C)

0

25

50

75

100

125

150

50

ID = 6 A

250

350

100

200

300

150

TYPICAL ELECTRICAL CHARACTERISTICS

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

Figure 14. Thermal Response

Figure 15. Diode Reverse Recovery Waveform

t, TIME (s)

1

0.1

0.01

D = 0.5

SINGLE PULSE

1.0E–05

1.0E–04

1.0E–03

1.0E–02

1.0E–01

1.0E+00

1.0E+01

0.2

0.1

0.05

0.02

0.01

1.0E+02

1.0E+03

0.001

10

0.0175

Ω

0.0710

Ω

0.2706

Ω

0.5776

Ω

0.7086

Ω

107.55 F

1.7891 F

0.3074 F

0.0854 F

0.0154 F

Chip

Ambient

Normalized to

θja at 10s.