MMDF3C03HD

6

Motorola TMOS Power MOSFET Transistor Device Data

Figure 8. Gate–To–Source and Drain–To–Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 8. Gate–To–Source and Drain–To–Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

20

10

30

0

0

6.0

3.0

0

Qg, TOTAL GATE CHARGE (nC)

2.0

4.0

6.0

8.0

14

ID = 3 A

TJ = 25°C

10

12

VDS

VGS

Q2

Q3

Q1

16

7.0

4.0

5.0

2.0

1.0

QT

RG, GATE RESISTANCE (OHMS)

1.0

10

100

100

10

1.0

VDD = 15 V

ID = 3 A

VGS = 10 V

TJ = 25°C

tr

tf

td(off)

td(on)

1000

20

10

30

0

0

6.0

3.0

0

Qg, TOTAL GATE CHARGE (nC)

12

9.0

2.0

4.0

6.0

8.0

14

ID = 5 A

TJ = 25°C

10

12

VDS

VGS

QT

Q2

Q3

Q1

16

7.0

4.0

10

11

5.0

2.0

8.0

1.0

RG, GATE RESISTANCE (OHMS)

1.0

10

100

100

10

1.0

VDD = 15 V

ID = 6 A

VGS = 10 V

TJ = 25°C

tr

tf

td(off)

td(on)

1000