MMDF3C03HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel

P–Channel

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 3. On–Resistance versus

Gate–To–Source Voltage

2.9 V

1.2

2.0

0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

6.0

4.0

5.0

3.0

2.0

1.0

0

0.6

0.2

0.4

0.8

1.0

1.4

1.6

1.8

TJ = 25°C

2.7 V

3.1 V

3.3 V

3.5 V

3.7 V

3.9 V

VGS = 10 V

4.1 V

4.5 V

6.0 V

4.3 V

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

4.5

5.0

1.5

4.0

2.0

1.0

0

2.0

2.5

3.0

3.5

4.0

3.0

5.0

6.0

VDS ≥ 10 V

TJ = –55°C

100

°C

25

°C

8.0

10

2.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0.8

0.4

0.3

0.2

0.1

0

9.0

3.0

4.0

5.0

6.0

7.0

0.5

TJ = 25°C

ID = 3 A

0.6

0.7

1.2

2.0

0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

12

8.0

10

6.0

4.0

2.0

0

0.6

0.2

0.4

0.8

1.0

1.4

1.6

1.8

TJ = 25°C

2.7 V

2.9 V

3.1 V

3.3 V

3.5 V

VGS = 2.5 V

10 V

6.0 V

4.5 V

4.3 V

4.1 V

3.7 V

3.9 V

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

4.5

5.0

1.5

8.0

4.0

2.0

0

2.0

2.5

3.0

3.5

4.0

6.0

10

12

VDS ≥ 10 V

TJ = –55°C

100

°C

25

°C

8.0

10

2.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0.30

0.20

0.15

0.10

0.05

0

9.0

3.0

4.0

5.0

6.0

7.0

0.25

TJ = 25°C

ID = 6 A