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Motorola TMOS Power MOSFET Transistor Device Data

Advance Information

Medium Power Surface Mount Products

TMOS Dual N-Channel

Field Effect Transistors

Dual HDTMOS are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density TMOS process. These

miniature surface mount MOSFETs feature low RDS(on) and true

logic level performance. Dual HDTMOS devices are designed for

use in low voltage, high speed switching applications where power

efficiency is important. Typical applications are dc–dc converters,

and power management in portable and battery powered products

such as computers, printers, cellular and cordless phones. They

can also be used for low voltage motor controls in mass storage

products such as disk drives and tape drives.

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

60

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 25°C

ID

IDM

3.3

16.5

Adc

Apk

Source Current — Continuous @ TA = 25°C

IS

1.7

Adc

Total Power Dissipation @ TA = 25°C (1)

PD

2.0

Watts

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 60 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 15 Apk, L = 10 mH, RG = 25 Ω)

EAS

105

mJ

Thermal Resistance — Junction–to–Ambient

R

θJA

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

DEVICE MARKING

D3N06

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMDF3N06HDR2

13

″

12 mm embossed tape

2500 units

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MMDF3N06HD/D

™

MMDF3N06HD

DUAL TMOS

POWER MOSFET

60 VOLTS

RDS(on) = 100 mW

CASE 751–05, Style 11

SO–8

D

S

G

Source–1

1

2

3

4

8

7

6

5

Top View

Gate–1

Source–2

Gate–2

Drain–1

Drain–1

Drain–2

Drain–2

Motorola Preferred Device

D

S

G

Preferred devices are Motorola recommended choices for future use and best overall value.