STP80NF70 datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STP80NF70

4/13

Doc ID 17610 Rev 1

Electrical characteristics

(TCASE=25°C unless otherwise specified).

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 40 A

0.0082 0.0098

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%.

Forward transconductance

VDS = 15 V, ID = 40 A

-60

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f = 1 MHz,

VGS = 0

2550

550

175

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 34 V, ID = 80 A

VGS =10 V

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD= 34 V, ID= 40 A,

RG=4.7 Ω, VGS=10 V

Figure 13 on page 9

STP80NF70 데이터시트(PDF) 4 Page - STMicroelectronics

STP80NF70 데이터시트(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

데이터시트 다운로드

링크 URL