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STP80NF70 데이터시트(PDF) 5 Page - STMicroelectronics |
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STP80NF70 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STP80NF70 Electrical characteristics Doc ID 17610 Rev 1 5/13 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 98 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 392 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 80 A, VGS = 0 -1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C Figure 15 on page 9 - 70 160 4.7 ns nC A |
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