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MCP87018 데이터시트(PDF) 1 Page - Microchip Technology

부품명 MCP87018
상세설명  High-Speed N-Channel Power MOSFET
PDF  14 Pages
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제조업체  MICROCHIP [Microchip Technology]
홈페이지  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

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 2013 Microchip Technology Inc.
DS22329A-page 1
MCP87018
Features:
• Low Drain-to-Source On Resistance (RDS(ON))
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
• Low Series Gate Resistance (RG)
•Fast Switching
• Capable of Short Dead-Time Operation
• RoHS Compliant
Applications:
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking and Automotive Applications
Description:
The MCP87018 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87018 to achieve a low QG for a given RDS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low FOM of the MCP87018
allows high efficiency power conversion with reduced
switching and conduction losses.
Package Type
Product Summary Table:
Unless otherwise indicated, TA = +25°C
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
BVDSS
25
—
—
V
VGS = 0V, ID = 250 µA
Gate-to-Source Threshold Voltage
VGS(TH)
11.3
1.6
V
VDS = VGS, ID = 250 µA
Drain-to-Source On Resistance
RDS(ON)
—1.8
2.2
mΩ
VGS = 4.5V, ID = 25A
—1.5
1.9
mΩ
VGS = 10V, ID = 25A
Total Gate Charge
QG
—
32.5
37
nC
VDS = 12.5V, ID = 25A, VGS = 4.5V
Gate-to-Drain Charge
QGD
—13—
nC
VDS = 12.5V, ID = 25A
Series Gate Resistance
RG
—1.5
—
Ω
—
Thermal Characteristics
Thermal Resistance Junction-to-X
RθJX
——
56
°C/W
Note 1
Thermal Resistance Junction-to-Case
RθJC
——
1.4
°C/W
Note 2
Note
1:
RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2:
RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
S
G
S
S
D
D
D
D
1
2
3
4
5
6
7
8
PDFN 5 x 6
High-Speed N-Channel Power MOSFET


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